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Volumn 52, Issue 4, 2005, Pages 569-576

Modeling of tunneling P/E for nanocrystal memories

Author keywords

Flash memories; Nanocrystal (NC) memories; Semiconductor device modeling; Tunneling

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

EID: 17444379707     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.845150     Document Type: Article
Times cited : (35)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.