Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 709-715

  Gnani, Elena ^a   Marchi, Alex ^a   Reggiani, Susanna ^a   Rudan, Massimo ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

gate FET; Electrostatic analysis; High dielectrics; Quantum mechanical simulation; Top gate carbon nanotube FET

Indexed keywords

CARBON NANOTUBES; DIELECTRIC MATERIALS; ELECTROSTATIC DEVICES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SILICON; TRANSCONDUCTANCE;

ELECTROSTATIC ANALYSIS; GATE FET; HIGH DIELECTRICS; QUANTUM-MECHANICAL SIMULATIONS; TOP-GATE CARBON NANOTUBE FET;

QUANTUM THEORY;

EID: 33646495070     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.039     Document Type: Article

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