Three-dimensional analytical modeling of nanocrystal memory electrostatics

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Ganguly, Udayan ^a   Narayanan, Venkat ^a   Lee, Chungho ^a   Hou, Tuo Hung ^a   Kan, Edwin C ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELS; DISCRETIZATION REQUIREMENTS; ELECTROSTATIC POTENTIALS; FLASH MEMORY MODELING;

COMPUTER SIMULATION; ELECTRON TUNNELING; MATHEMATICAL MODELS; MAXWELL EQUATIONS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; THREE DIMENSIONAL;

ELECTROSTATICS;

EID: 33745276535     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202695     Document Type: Article

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