메뉴 건너뛰기




Volumn 20, Issue 2, 1997, Pages 190-195

A low voltage SONOS nonvolatile semiconductor memory technology

Author keywords

EEPROM; Nonvolatile semiconductor memory; SONOS

Indexed keywords

CMOS INTEGRATED CIRCUITS; NONVOLATILE STORAGE; SEMICONDUCTOR STORAGE;

EID: 0031165055     PISSN: 10709886     EISSN: None     Source Type: Journal    
DOI: 10.1109/95.588573     Document Type: Article
Times cited : (115)

References (20)
  • 1
    • 0024143721 scopus 로고
    • A ferroelectric nonvolatile memory
    • vol. 10.6
    • S. S. Eaton et al., "A ferroelectric nonvolatile memory," in Proc. IEEE ISSCC, Session THAM, vol. 10.6, 1988.
    • (1988) Proc. IEEE ISSCC, Session THAM
    • Eaton, S.S.1
  • 2
    • 0001439114 scopus 로고
    • Scaling of multidielectric nonvolatile SONOS memory structures
    • M. L. French and M. H. White, "Scaling of multidielectric nonvolatile SONOS memory structures," Sol. State Electron, vol. 37, p. 1913, 1995.
    • (1995) Sol. State Electron , vol.37 , pp. 1913
    • French, M.L.1    White, M.H.2
  • 3
    • 0029409435 scopus 로고
    • High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application
    • H. C. Wann and C. Hu, "High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application," IEEE Electron Device Lett., vol. 16, p. 491, 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 491
    • Wann, H.C.1    Hu, C.2
  • 4
    • 0016961262 scopus 로고
    • On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique
    • J. F. Dickson, "On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique," IEEE J. Solid-State Circuits, vol. SC-11, p. 374, 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.SC-11 , pp. 374
    • Dickson, J.F.1
  • 5
    • 55549142266 scopus 로고
    • The variable-threshold transistor, a new electrically-alterable, nondestructive read-only storage device
    • H. A. R. Wegener et al., "The variable-threshold transistor, a new electrically-alterable, nondestructive read-only storage device," IEEE IEDM Tech. Dig., 1967.
    • (1967) IEEE IEDM Tech. Dig.
    • Wegener, H.A.R.1
  • 6
    • 0015768345 scopus 로고
    • The drain-source protected MNOS memory device and memory endurance
    • J. R. Cricchi et al., "The drain-source protected MNOS memory device and memory endurance," IEEE IEDM Tech. Dig., p. 126, 1973.
    • (1973) IEEE IEDM Tech. Dig. , pp. 126
    • Cricchi, J.R.1
  • 8
    • 0017496353 scopus 로고
    • Threshold-alterable Si-gate MOS devices
    • P. Chen, "Threshold-alterable Si-gate MOS devices," IEEE Trans. Electron Devices, vol. ED-24, p. 584, 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , pp. 584
    • Chen, P.1
  • 9
    • 0020708742 scopus 로고
    • A low-voltage alterable EEPROM with metal-oxide-nitride-oxide-semiconductor (MONOS) structures
    • E. Suzuki et al., "A low-voltage alterable EEPROM with metal-oxide-nitride-oxide-semiconductor (MONOS) structures," IEEE Trans. Electron Devices, vol. ED-30, p. 122, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 122
    • Suzuki, E.1
  • 10
    • 0019927486 scopus 로고
    • Scaling down MNOS nonvolatile memory devices
    • Y. Yatsuda et al., "Scaling down MNOS nonvolatile memory devices," Jpn. J. Appl. Phys., vol. 21, p. 85, 1982.
    • (1982) Jpn. J. Appl. Phys. , vol.21 , pp. 85
    • Yatsuda, Y.1
  • 11
    • 0017496018 scopus 로고
    • Endurance of thin-oxide nonvolatile MNOS memory transistors
    • M. H. White et al., "Endurance of thin-oxide nonvolatile MNOS memory transistors," IEEE Trans. Electron Devices, vol. ED-24, p. 577, 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , pp. 577
    • White, M.H.1
  • 13
    • 0024985779 scopus 로고
    • Charge transport and storage of low programming voltage SONOS/MONOS memory devices
    • F. R. Libsch and M. H. White, "Charge transport and storage of low programming voltage SONOS/MONOS memory devices," Sol. State Electron, vol. 33, p. 105, 1990.
    • (1990) Sol. State Electron , vol.33 , pp. 105
    • Libsch, F.R.1    White, M.H.2
  • 14
    • 33748647405 scopus 로고
    • SONOS technology for commercial and military nonvolatile memory applications
    • D. Adams et al., "SONOS technology for commercial and military nonvolatile memory applications," in Proc. 5th IEEE NVTMR, 1987, vol. 96.
    • (1987) Proc. 5th IEEE NVTMR , vol.96
    • Adams, D.1
  • 15
    • 0026139517 scopus 로고
    • A 1-Mb EEPROM with MONOS memory cell for semiconductor disk application
    • T. Nozaki et al., "A 1-Mb EEPROM with MONOS memory cell for semiconductor disk application," IEEE J. Solid-State Circuits, vol. 26, p. 497, 1991.
    • (1991) IEEE J. Solid-State Circuits , vol.26 , pp. 497
    • Nozaki, T.1
  • 16
    • 33748641504 scopus 로고
    • A novel dual string NOR (DuSNOR) memory cell technology scalable to the 256 Mbit and 1 Gbit flash memories
    • K. S. Kim et al., "A novel dual string NOR (DuSNOR) memory cell technology scalable to the 256 Mbit and 1 Gbit flash memories," IEEE IEDM Tech. Dig., vol. 263, 1995.
    • (1995) IEEE IEDM Tech. Dig. , vol.263
    • Kim, K.S.1
  • 17
    • 36149019114 scopus 로고
    • Thermionic emission, field emission, and the transition region
    • E. L. Murphy and R. H. Good Jr., "Thermionic emission, field emission, and the transition region," Phys. Rev., vol. 102, no. 6, p. 1464, 1956.
    • (1956) Phys. Rev. , vol.102 , Issue.6 , pp. 1464
    • Murphy, E.L.1    Good Jr., R.H.2
  • 18
    • 0015671671 scopus 로고
    • Trap-assisted charge injection in MNOS structures
    • C. Svensson and I. Lundstrom, "Trap-assisted charge injection in MNOS structures," J. Appl. Phys., vol. 44, p. 4657, 1973.
    • (1973) J. Appl. Phys. , vol.44 , pp. 4657
    • Svensson, C.1    Lundstrom, I.2
  • 19
    • 0020193540 scopus 로고
    • Charge pumping measurements on stepped-gate metal-nitride-oxide-silicon memory transistors
    • H. E. Maes and G. L. Heyns, "Charge pumping measurements on stepped-gate metal-nitride-oxide-silicon memory transistors," J. Appl. Phys., vol. 53, p. 7106, 1981.
    • (1981) J. Appl. Phys. , vol.53 , pp. 7106
    • Maes, H.E.1    Heyns, G.L.2
  • 20
    • 0028495167 scopus 로고
    • Design and scaling of a SONOS multidielectric device for nonvolatile memory applications
    • M. L. French et al., "Design and scaling of a SONOS multidielectric device for nonvolatile memory applications," IEEE Trans. Comp., Packag., Manufact. Technol., vol. 17, p. 390, 1994.
    • (1994) IEEE Trans. Comp., Packag., Manufact. Technol. , vol.17 , pp. 390
    • French, M.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.