Low programming voltages and long retention time in metal nanocrystal EEPROM devices

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 79-80

  Liu, Z ^a   Narayanan, V ^a   Kim, M ^a   Pei, G ^a   Kan, E C ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GATES (TRANSISTOR); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS;

PROGRAMMING VOLTAGES;

PROM;

EID: 0034867155     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)