Single Electron Effects and Structural Effects in Ultrascaled Silicon Nanocrystal Floating-Gate Memories

IEEE Transactions on Nanotechnology

Volumn 3, Issue 1 SPEC. ISS., 2004, Pages 42-48

  Molas, G ^a   De Salvo, Barbara ^a   Ghibaudo, Gérard ^b   Mariolle, D ^a   Toffoli, A ^a   Buffet, N ^a   Puglisi, R ^c   Lombarde, S ^c   Deleonibus, S ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c CNR   (Italy)

Author keywords

Electron beam (e beam) lithography; Memories; Quantum dots; Silicon on insulator (SOI) technology

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

FLASH MEMORIES; FLOATING-GATE MEMORIES; MEMORY PROGRAMMING; SINGLE ELECTRON EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 2342447280     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.824016     Document Type: Conference Paper

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