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Applied Physics A: Materials Science and Processing

Volumn 71, Issue 4, 2000, Pages 403-414

Small silicon memories: Confinement, single-electron, and interface state considerations

(5) Tiwari, S a Wahl, J A a Silva, H a Rana, F b Welser, J J c

a School of Chemical and Molecular Engineering (United States)

b Department of Electrical Engineering and Computer Science (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTROSTATICS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY;

SINGLE-ELECTRON EFFECT;

SEMICONDUCTOR STORAGE;

EID: 0034288612 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390000553 Document Type: Article

Times cited : (60)

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