SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 4, 2000, Pages 403-414

Small silicon memories: Confinement, single-electron, and interface state considerations

(5) Tiwari, S a Wahl, J A a Silva, H a Rana, F b Welser, J J c

a School of Operations Research and Industrial Engineering (United States)

b Department of Electrical Engineering and Computer Science (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTROSTATICS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY;

SINGLE-ELECTRON EFFECT;

SEMICONDUCTOR STORAGE;

EID: 0034288612 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390000553 Document Type: Article

Times cited : (60)

References (17)

1
- 0029516376
- S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, D. Buchanan: Tech. Dig. IEDM 521, 1995
- (1995) Tech. Dig. IEDM , pp. 521
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Chan, W.⁵ Buchanan, D.⁶

2
- 0031167986
- J.J. Welser, S. Tiwari, S. Rishton, K.Y. Lee, Y. Lee: IEEE Electron Dev. Lett. 278, 1997
- (1997) IEEE Electron Dev. Lett. , pp. 278
- Welser, J.J.¹ Tiwari, S.² Rishton, S.³ Lee, K.Y.⁴ Lee, Y.⁵

3
- 0031039096
- S. Guo, E. Leobandung, S. Chou: Science 175, 649 (1997)
- (1997) Science , vol.175 , pp. 649
- Guo, S.¹ Leobandung, E.² Chou, S.³

4
- 0027889406
- K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, K. Seki: Tech. Dig. IEDM 541, 1993
- (1993) Tech. Dig. IEDM , pp. 541
- Yano, K.¹ Ishii, T.² Hashimoto, T.³ Kobayashi, T.⁴ Murai, F.⁵ Seki, K.⁶

5
- 0001136607
- K. Nakazato, R.J. Blaikie, H. Ahmed: J. Appl. Phys. 75, 5123 (1994)
- (1994) J. Appl. Phys. , vol.75 , pp. 5123
- Nakazato, K.¹ Blaikie, R.J.² Ahmed, H.³

6
- 0003132251
- C.A. Neugebauer, M.B. Webb: J. Appl. Phys. 33, 74 (1962)
- (1962) J. Appl. Phys. , vol.33 , pp. 74
- Neugebauer, C.A.¹ Webb, M.B.²

7
- 0001630171
- T.A. Fulton, G.J. Dolan: Phys. Rev. Lett. 59, 109 (1987)
- (1987) Phys. Rev. Lett. , vol.59 , pp. 109
- Fulton, T.A.¹ Dolan, G.J.²

8
- 0003423226
- Plenum Press, New York
- H. Grabert, M.H. Devoret: Single Charge Tunneling (Plenum Press, New York 1992)
- (1992) Single Charge Tunneling
- Grabert, H.¹ Devoret, M.H.²

9
- 0003423226
- ed. by H. Grabert, M.H. Devoret Plenum Press, New York
- M.H. Devoret: In Single Charge Tunneling, ed. by H. Grabert, M.H. Devoret (Plenum Press, New York 1992)
- (1992) Single Charge Tunneling
- Devoret, M.H.¹

10
- 25044431563
- K.K. Likharev: Phys. Rev. B 165, 821 (1968)
- (1968) Phys. Rev. B , vol.165 , pp. 821
- Likharev, K.K.¹

11
- 24244461316
- A. Kumar, S.E. Laux, F. Stern: Phys. Rev. B 42, 5166 (1990)
- (1990) Phys. Rev. B , vol.42 , pp. 5166
- Kumar, A.¹ Laux, S.E.² Stern, F.³

12
- 0029419181
- D. Burnett, S.W. Sun: Proc. SPIE 2636, 83 (1995)
- (1995) Proc. SPIE , vol.2636 , pp. 83
- Burnett, D.¹ Sun, S.W.²

13
- 85056911965
- D.J. Frank, S.E. Laux, M.V. Fischetti: Tech. Dig. IEDM 553, 1992
- (1992) Tech. Dig. IEDM , pp. 553
- Frank, D.J.¹ Laux, S.E.² Fischetti, M.V.³

14
- 0029520010
- I.C. Yang, C. Vieri, A. Chandrakasan, D.A. Antoniadis: Tech. Dig. IEDM 877, 1995
- (1995) Tech. Dig. IEDM , pp. 877
- Yang, I.C.¹ Vieri, C.² Chandrakasan, A.³ Antoniadis, D.A.⁴

15
- 0000730037
- F. Rana, S. Tiwari, D.A. Buchanan: Appl. Phys. Lett. 69, 1104 (1996)
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1104
- Rana, F.¹ Tiwari, S.² Buchanan, D.A.³

16
- 0032267116
- S. Tiwari, J.J. Welser, P. Solomon: Tech. Dig. IEDM 737, (1998)
- (1998) Tech. Dig. IEDM , pp. 737
- Tiwari, S.¹ Welser, J.J.² Solomon, P.³

17
- 0031679704
- F. Rana, S. Tiwari, J.J. Welser: Superlattices Microstruct. 23, 757 (1998)
- (1998) Superlattices Microstruct. , vol.23 , pp. 757
- Rana, F.¹ Tiwari, S.² Welser, J.J.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.