Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel

Applied Physics Letters

Volumn 82, Issue 2, 2003, Pages 275-277

  Choi, Won Bong ^a   Chae, Soodoo ^a   Bae, Eunju ^a   Lee, Jo Won ^a   Cheong, Byoung Ho ^a   Kim, Jae Ryoung ^b   Kim, Ju Jin ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; ELECTRODES; ELECTRON TRAPS; GATES (TRANSISTOR); NONVOLATILE STORAGE; THRESHOLD VOLTAGE;

NANOSCALE CHANNEL;

CARBON NANOTUBES;

EID: 0037434186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536713     Document Type: Article

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