Impact of silicon incorporation on the formation of structural defects in AlN

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Hermann, M ^a   Furtmayr, F ^a   Morales, F M ^b,c   Ambacher, O ^b   Stutzmann, M ^a   Eickhoff, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RAMAN SPECTROSCOPY; SILICON; SURFACES; X RAY DIFFRACTION ANALYSIS;

BIAXIAL STRESS; EDGE DISLOCATIONS; STRUCTURAL DEFECTS;

ALUMINUM NITRIDE;

EID: 33845809196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363239     Document Type: Article

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