Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm2 V-1 s-1)

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4672-4674

  Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a   Makimoto, Toshiki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; ELECTRON SCATTERING; IMPURITIES; IONIZATION; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; DONOR IMPURITIES; GROWTH CONDITIONS; VARIABLES;

ALUMINUM NITRIDE;

EID: 10944270149     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1824181     Document Type: Article

References (16)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. M. C. Benjamin, C. Wang, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 64, 3288 (1994).
3. Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. 84, 2115 (2004).
4. R. Zeiscl, M. W. Bayeri, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, and M. Stutzmann. Phys. Rev. B 61, R16283 (2000).
5. Y. Taniyasu, M. Kasu, and N. Kobayashi, Appl. Phys. Lett. 81, 1255 (2002).
6. Y. Taniyasu, M. Kasu, and N. Kobayashi, Phys. Status Solidi B 234, 845 (2002).
7. V. W. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
8. J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand, and K. F. Brennan, J. Appl. Phys. 83, 1446 (1998).
9. Y. Taniyasu, M. Kasu, and T. Makimoto (unpublished).
10. C. Stampfl and C. G. Van der Walle, Appl. Phys. Lett 72, 459 (1998).
11. B. R. Nag, Election Transport in Compound Semiconductors (Springer, New York, 1980), p. 175.
12. H. Brooks, Adv. Electron. Electron Phys. 7, 85 (1955).
13. B. L. Gelmont, M. Shut, and M. Stroscio, J. Appl. Phys. 77, 657 (1995).
14. J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand, E. Bellotti, and K. F. Brennan, Mater. Res. Soc. Symp. Proc. 482, 815 (1998).
15. V. Yu. Davydov and S. K. Tikhonov, Semiconductors 30, 514 (1996).
16. Y. Taniyasu, M. Kasu, and T. Makimoto (unpublished).