Evaluation of strain in AlN thin films grown on sapphire and 6H-SiC by metalorganic chemical vapor deposition

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1671-1674

  Kato, Naoto ^a   Inushima, Takashi ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

6H-SIC; ALN FILMS; ALN-BUFFER LAYERS; BIAXIAL STRESS; 61.10.NZ; 78.30.FS; 79.30.FS; 81.15.GH; 81.70.FY; 83.85.ST;

ALUMINUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON CARBIDE; STRAIN; GROWTH RATE; THERMAL EXPANSION; VAPORS; X RAY DIFFRACTION;

THIN FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 33746397092     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565183     Document Type: Conference Paper

References (9)

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