The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Lebedev, V ^a   Morales, F M ^a   Romanus, H ^a   Krischok, S ^a   Ecke, G ^a   Cimalla, V ^a   Himmerlich, M ^a   Stauden, T ^a   Cengher, D ^a   Ambacher, O ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; DISLOCATION NETWORK; SURFACE OXIDATION;

DOPING (ADDITIVES); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OXIDATION; SILICON COMPOUNDS; SURFACE ACTIVE AGENTS;

THIN FILMS;

EID: 27844578362     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2126786     Document Type: Article

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