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Volumn 2, Issue 7, 2005, Pages 2774-2778

Raman, photoluminescence and absorption studies on high quality AlN single crystals

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM NITRIDE; CRYSTAL IMPURITIES; MASS SPECTROMETRY; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; RAMAN SCATTERING; SUBLIMATION;

EID: 27344455889     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461509     Document Type: Conference Paper
Times cited : (15)

References (24)
  • 15
    • 27344443480 scopus 로고    scopus 로고
    • R.A. Youngman and J.H. Harris
    • R.A. Youngman and J.H. Harris
  • 18
    • 0004753482 scopus 로고
    • Properties of Group in Nitrides IEE, edited by J. H. Edgar (Inspec, London)
    • J. H. Harris and R. A. Youngman, in: Properties of Group in Nitrides IEE, EMIS Datarev Series No. 11, edited by J. H. Edgar (Inspec, London, 1994), p. 203.
    • (1994) EMIS Datarev Series No. 11 , vol.11 , pp. 203
    • Harris, J.H.1    Youngman, R.A.2
  • 22
    • 0002815958 scopus 로고    scopus 로고
    • edited by R. Hull, R. M. Osgood, Jr., H. Sakaki, and A. Zunger (Springer, New York)
    • H. Morkoc, Nitride Semiconductors and Devices, edited by R. Hull, R. M. Osgood, Jr., H. Sakaki, and A. Zunger (Springer, New York, 1999), p. 17.
    • (1999) Nitride Semiconductors and Devices , pp. 17
    • Morkoc, H.1
  • 23
    • 0042561618 scopus 로고    scopus 로고
    • Properties, processing and applications of galium nitride and related semiconductors
    • edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (London)
    • A. Yoshida, Properties, Processing and Applications of Galium Nitride and Related Semiconductors, EMIS Data Reviews Series No. 23, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (London, 1999).
    • (1999) EMIS Data Reviews Series No. 23 , vol.23
    • Yoshida, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.