Growth pressure dependence of residual strain and threading dislocations in the GaN layer

Physica Status Solidi C: Conferences

Volumn 1, Issue 10, 2004, Pages 2458-2461

  Lee, Sung Nam ^a,c   Son, J K ^a   Pack, H S ^a   Sakong, T ^a   Lee, W ^a   Kim, K H ^a   Kim, S S ^a   Lee, Y J ^b   Noh, D Y ^b   Yoon, E ^c   Nam, H ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; RESIDUAL STRESSES; SAPPHIRE; STRAIN; THIN FILMS;

COMPRESSIVE STRAINS; EPITAXIAL LAYERS; GROWTH PRESSURES; THREADING DISLOCATIONS (TD);

GALLIUM NITRIDE;

EID: 7044239320     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200405007     Document Type: Conference Paper

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