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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1404-1408

Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications

(5) Starikov, D a Boney, C a Berishev, I a Hernandez, I C a Bensaoula, A a

a UNIVERSITY OF HOUSTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTODIODES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ALFA-STEP PROFILING; ALUMINUM GALLIUM NITRIDE; HOT PROBE; INDIUM GALLIUM NITRIDE; MOLE FRACTION; OPTOELECTRONIC SENSORS; VAN DER PAUW HALL EFFECT;

MICROSENSORS;

EID: 0035535272 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1386382 Document Type: Conference Paper

Times cited : (6)

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