Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Ive, Tommy ^a   Brandt, Oliver ^a   Kostial, Helmar ^a   Friedland, Klaus J ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CERAMIC MATERIALS; DOPING (ADDITIVES); ELECTRIC INSULATION; ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SILICON;

BAND GAP; DONORS; METALORGANIC VAPOR-PHASE EPITAXY (MOVPE); SUBOXIDES;

THIN FILMS;

EID: 19744383115     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1850183     Document Type: Article

References (26)

1. G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, J. Appl. Phys. 93, 1363 (2003).
2. V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, I. Gherasoiu, G. Kipshidze, S. N. G. Chu, M. Holtz, Y. Kudryavtsev, R. Asomoza, S. Nikishin, and H. Temkin, Appl. Phys. Lett. 83, 1319 (2003).
3. V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 1903 (2001).
4. C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, and M. Stutzmann, Appl. Phys. Lett. 82, 290 (2003).
5. T. Ive, O. Brandt, H. Kostial, K. J. Friedland, L. Däweritz, and K. H. Ploog, Appl. Phys. Lett. 85, 1970 (2004).
6. I. Waki, C. Kumtornkittikul, Y. Shimogaki, and Y. Nakano, Appl. Phys. Lett. 82, 4465 (2003).
7. C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 77, 3722 (2000).
8. M. Kasu and N. Kobayashi, Appl. Phys. Lett. 79, 3642 (2001).
9. Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. 84, 2115 (2004).
10. M. Kasu, Y. Taniyasu, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2, Part 2 40, L1048 (2001).
11. C. Stampfl and C. G. Van de Walle, Appl. Phys. Lett. 72, 459 (1998).
12. A. Fara, F. Bernardini, and V. Fiorentini, J. Appl. Phys. 85, 2001 (1999).
13. S. B. Zhang, S.-H. Wei, and A. Zunger, Phys. Rev. Lett. 84, 1232 (2000).
14. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 83, 2787 (2003).
15. J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 20, 3245 (2001).
16. R. Zeisel, M. W. Bayerl, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, and M. Stutzmann, Phys. Rev. B 61, Rl6283 (2000).
17. M. Kasu and N. Kobayashi, J. Cryst. Growth 221, 739 (2000).
18. Y. Taniyasu, M. Kasu, and N. Kobayashi, Appl. Phys. Lett. 81, 1255 (2002).
19. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Jpn. J. Appl. Phys., Part 2, Part 2 42, L229 (2003).
20. M. D. McCluskey, N. M. Johnson, C. G. Van de Walle, D. P. Bour, M. Kneissl, and W. Walukiewicz, Phys. Rev. Lett. 80, 4008 (1998).
21. S. T. Bradley, S. H. Goss, L. J. Brillson, J. Hwang, and W. J. Schaff, J. Vac. Sci. Technol. B 21, 2558 (2003).
22. O. Brandt, R. Muralidharan, P. Waltereit, A. Thamm, A. Trampert, H. von Kiedrowski, and K. H. Ploog, Appl. Phys. Lett. 75, 4019 (1999).
23. C. D. Lee, R. M. Feenstra, J. E. Northrup, and J. Neugebauer, Phys. Rev. B 68, 205317 (2003).
24. C. Stampfl and C. G. Vande de Walle, Phys. Rev. B 65, 155212 (2002).
25. M. Kasu and N. Kobayashi, Appl. Phys. Lett. 78, 1835 (2001).
26. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).