Strain relaxation by (100) misfit dislocations in dilute nitride in xGa 1-xAs 1-yN y/GaAs quantum wells

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 15, 2005, Pages 2849-2857

  Young, E C ^a   Koveshnikov, A N ^b   Tixier, S ^a   Kavanagh, K L ^b   Tiedje, T ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD); OPTICAL EMISSION; STRAIN RELAXATION; CRITICAL THICKNESS; DILUTE NITRIDES; HIGH-RESOLUTION X-RAY DIFFRACTION; HIGHLY STRAINED; OPTICAL EMISSIONS; RELAXATION MECHANISM; SINGLE QUANTUM WELL; VARYING THICKNESS;

NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; DISLOCATIONS (CRYSTALS); EDGE DISLOCATIONS; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; STRAIN RELAXATION; SURFACE ACTIVE AGENTS; X RAY DIFFRACTION;

DISLOCATIONS (CRYSTALS); SEMICONDUCTOR QUANTUM WELLS;

EID: 29744467505     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521092     Document Type: Article

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