Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 17, 2006, Pages

  Macchi, C ^a,d   Mariazzi, S ^a   Karwasz, G P ^a,e   Brusa, R S ^a   Folegati, P ^b   Frabboni, S ^c   Ottaviani, G ^c  

^a UNIVERSITY OF TRENTO   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d Universidad Nacional de Río Cuarto Consejo Nacional de Investigaciones Científicas y Técnicas   (Argentina)

^e NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751522885     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.174120     Document Type: Article

References (45)

1. M. Alatalo, M. J. Puska, and R. M. Nieminen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.46.12806 46, 12806 (1992).
2. C. F. Cerofolini, F. Corni, S. Frabboni, C. Nobili, G. Ottaviani, and R. Tonini, Mater. Sci. Eng., R. MIGIEA 0927-796X 10.1016/S0927-796X(00)00007-3 27, 1 (2000).
3. S. Mäkinen, H. Rajainmäki, and S. Linderoth, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.44.5510 44, 5510 (1991).
4. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992).
5. J. Grisolia, F. Cristiano, G. Ben Assayag, and A. Claverie, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/S0168-583X(00)00503-6 178, 160 (2001).
6. J. H. Evans, A. Van Veen, and C. C. Griffioen, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/0168-583X(87)90176-5 28, 360 (1987).
7. R. S. Brusa, C. Macchi, S. Mariazzi, G. P. Karwasz, W. Egger, P. Sperr, and G. Kögel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.245320 71, 245320 (2005).
8. R. S. Brusa, C. Macchi, S. Mariazzi, G. P. Karwasz, W. Egger, P. Sperr, and G. Kögel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2162691 88, 011920 (2006).
9. D. A. Brett, G. de M. Azevedo, D. J. Liewellyn, and M. C. Ridgway, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1597424 83, 946 (2003).
10. M. Bruel, Electron. Lett. ELLEAK 0013-5194 10.1049/el:19950805 31, 1201 (1995).
11. C. H. Yun, N. Quitoriano, and N. W. Cheung, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1559655 82, 1544 (2003).
12. C. Maleville and C. Mazuré, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2003.12.029 48, 1055 (2004).
13. J. Keinonen, M. Hautala, E. Rauhala, V. Karttunen, A. Kuronen, J. Räisänen, J. Lahtinen, A. Vehanen, E. Punkka, and P. Hautojärvi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.37.8269 37, 8269 (1988).
14. R. S. Brusa, M. Duarte Naia, A. Zecca, C. Nobili, G. Ottaviani, R. Tonini, and A. Dupasquier, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.49. 7271 49, 7271 (1994).
15. M. Fujinami, R. Suzuki, T. Ohdaira, and T. Mikado, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.12559 58, 12559 (1998).
16. R. A. Hakvoort, A. van Veen, P. E. Mijnarends, and H. Schut, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/0169-4332(94)00342-4 85, 271 (1995).
17. M. Zhang, C. Lin, H. Weng, R. Scholz, and U. Gösele, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(98)00808-6 333, 245 (1998).
18. R. S. Brusa, G. P. Karwasz, N. Tiengo, A. Zecca, F. Corni, G. Calzolari, and C. Nobili, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369555 85, 2390 (1999).
19. R. S. Brusa, G. P. Karwasz, N. Tiengo, A. Zecca, F. Corni, R. Tonini, and G. Ottaviani, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.10154 61, 10154 (2000).
20. M. Fujinami, T. Miyagoe, T. Sawada, R. Suzuki, T. Ohdaira, and T. Akahane, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.165332 68, 165332 (2003).
21. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors, Defect Studies, Springer Series in Solid State Science (Springler-Verlag, Berlin Heidelberg, 1999).
22. J. L. Hastings, S. K. Estreicher, and P. A. Fedders, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.10215 56, 10215 (1997).
23. A. Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, and D. J. Eaglesham, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.120945 72, 1086 (1998).
24. M. K. Weldon, M. Collot, Y. J. Chabal, V. C. Venezia, A. Agarwal, T. E. Haynes, T. E. Eaglesham, S. B. Christman, and E. E. Chaban, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122875 73, 3721 (1998).
25. C. Qian, B. Terreault, and S. C. Gujrathi, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 175-177, 711 (2001).
26. I. Radu, I. Szafraniak, R. Shol, M. Alexe, and U. Gösele, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1627459 94, 7820 (2003).
27. O. Moutanabbir and B. Terreault, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1861502 86, 051906 (2005).
28. G. F. Cerofolini, G. Calzolari, F. Corni, C. Nobili, G. Ottaviani, and R. Tonini, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/S0921-5107(99)00374-8 71, 196 (2000).
29. F. Corni, C. Nobili, R. Tonini, G. Ottaviani, and M. Tonelli, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1344568 78, 2870 (2001).
30. Xinzhong Duo, Weili Liu, Miao Zhang, Lianwei Wang, Chenglu Lin, M. Okuyama, M. Noda, Wing-Yiu Cheung, S. P. Wong, Paul K. Chu, Peigang Hu, S. X. Wang, and L. M. Wang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1389478 90, 3780 (2001).
31. R. Tonini, F. Corni, C. Nobili, G. Ottaviani, F. Cazzaniga, and G. Queirolo, Solid State Phenom. DDBPE8 1012-0394 82-84, 291 (2002).
32. A. Zecca, M. Bettonte, J. Paridaens, G. P. Karwasz, and R. S. Brusa, Meas. Sci. Technol. MSTCEP 0957-0233 10.1088/0957-0233/9/1/001 9, 1 (1998).
33. P. Asoka-Kumar, K. G. Lynn, and D. O. Welch, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.357207 76, 4935 (1994).
34. A. Dupasquier and G. Ottaviani, in Positron Spectroscopy of Solids, edited by, A. Dupasquier, and, A. P. Mills, Jr., (North Holland, Amsterdam, 1995), p. 491.
35. M. Alatalo, H. Kauppinen, K. Saarinen, M. J. Puska, J. Makinen, P. Hautojarvi, and R. M. Nieminen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.4176 51, 4176 (1995).
36. P. Asoka-Kumar, M. Alatalo, V. J. Ghosh, A. C. Kruseman, B. Nielsen, and K. G. Lynn, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.2097 77, 2097 (1996).
37. S. Szpala, P. Asoka-Kumar, B. Nielsen, J. P. Peng, S. Hayakawa, K. G. Lynn, and H. -J. Gossmann, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54. 4722 54, 4722 (1996).
38. R. S. Brusa, W. Deng, G. P. Karwasz, A. Zecca, and D. Pliszka, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1401782 79, 149 (2001).
39. S. Frabboni, F. Corni, C. Nobili, R. Tonini, and G. Ottaviani, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.165209 69, 165209 (2004).
40. S. Frabbroni, G. C. Gazzandi, L. Felisari, R. Tonini, F. Corni, and G. Ottaviani, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1790031 85, 1683 (2004).
41. R. M. Nieminen and J. Laakkonen, Appl. Phys. APHYCC 0340-3793 10.1007/BF00885942 20, 181 (1979).
42. A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, and K. Sumino, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.34.2197 34, 2197 (1995).
43. M. Hakala, M. J. Puska, and R. M. Nieminen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.7621 57, 7621 (1998).
44. Y. J. Chabal, M. K. Weldon, Y. Caudano, B. B. Stefanov, and K. Raghavachari, Physica B PHYBE3 0921-4526 273-274, 152 (1999).
45. S. K. Estreicher, J. L. Hastings, and P. A. Fedders, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.R12663 57, R12663 (1998).