Polycrystalline silicon layer transfer by ion-cut

Applied Physics Letters

Volumn 82, Issue 10, 2003, Pages 1544-1546

  Yun, C H ^a   Quitoriano, N ^b   Cheung, N W ^c  

^a ANALOG DEVICES INC   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ION IMPLANTATION; SILICON WAFERS; SINGLE CRYSTALS; SURFACE ROUGHNESS;

THERMAL SEPARATION;

POLYSILICON;

EID: 0037429887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559655     Document Type: Article

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