Layer splitting in Si by H + He ion co-implantation: Channeling effect limitation at low energy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 711-714

  Qian, C ^a   Terreault, B ^a   Gujrathi, S C ^b  

^a INRS EMT   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

Blistering; Helium; Hydrogen; Layer splitting; Silicon on insulator

Indexed keywords

ANNEALING; HELIUM; HYDROGEN; ION BOMBARDMENT; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

ION CO-IMPLANTATION; LAYER SPLITTING METHOD; SURFACE BLISTERING;

SEMICONDUCTING SILICON;

EID: 0035303203     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00553-X     Document Type: Conference Paper

References (12)