Defect-induced dissociation of in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 20, 1998, Pages R12663-R12665

  Estreicher, S ^a   Hastings, J ^a   Fedders, P ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000288232     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.R12663     Document Type: Article

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