Helium ion implantation-induced defects in silicon probed with variable-energy positrons

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Fujinami, M ^a   Miyagoe, T ^a   Sawada, T ^a   Suzuki, R ^b   Ohdaira, T ^b   Akahane, T ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM; SILICON;

ARTICLE; ENERGY; HEATING; IRRADIATION; MATHEMATICAL ANALYSIS; MOLECULAR STABILITY; POSITRON; SPECTROSCOPY;

EID: 18744437293     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165332     Document Type: Article

References (26)

1. C. F. Cerofolini, F. Corni, S. Frabboni, C. Nobili, G. Ottavianni, and T. Tonini, Mater. Sci. Eng. 27, 1 (2000).
2. S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992).
3. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors (Springer, Berlin, 1998).
4. R. A. Hakvoort, A. van Veen, P. E. Mijnarends, and H. Schut, Appl. Surf. Sci. 85, 271 (1995).
5. R. S. Brusa, G. P. Karwasz, N. Tiengo, A. Zecca, F. Corni, G. Calzolari, and C. Nobili, J. Appl. Phys. 85, 2390 (1999).
6. P. Asoka-Kumar, M. Alatalo, V. J. Ghosh, A. C. Kruseman, B. Neilsen, and K. G. Lynn, Phys. Rev. Lett. 77, 2097 (1996).
7. S. Valkealahti and R. Nieminen, Appl. Phys. A: Solids Surf. 35, 51 (1984).
8. M. Fujinami and N. B. Chilton, J. Appl. Phys. 73, 3242 (1993).
9. P. G. Coleman and A. P. Knights, Appl. Surf. Sci. 149, 82 (1999).
10. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
11. A. van Veen, H. Schut, J. de Vries, R. A. Hakvoort, and M. R. IJpma, in Positron Beams for Solids and Surfaces, edited by P. J. Schultz, G. R. Massoumi, and P. J. Simpson, AIP Conf. Proc. No. 218 (AIP, New York, 1990), p. 171.
12. R. Suzuki, Y. Kobayashi, T. Mikado, H. Ohgaki, M. Chiwaki, T. Yamazaki, and T. Tomimasu, Jpn. J. Appl. Phys., Part 1 30, L532 (1991).
13. P. Kirkegaard, M. Eldrup, O. E. Mogensen, and N. J. Pedersen, Comput. Phys. Commun. 23, 307 (1981).
14. J. W. Mayer, L. Eriksson, S. T. Picraux, and J. A. Davies, Can. J. Phys. 46, 663 (1968).
15. A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, and K. Sumino, Mater. Sci. Forum 175–178, 423 (1995).
16. A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, and K. Sumino, Jpn. J. Appl. Phys., Part 1 34, 2197 (1995).
17. M. Hakala, M. J. Puska, and R. M. Nieminen, Phys. Rev. B. 57, 7621 (1998).
18. M. Fujinami, R. Suzuki, T. Ohdaira, and T. Mikado, Phys. Rev. B. 58, 12-559 (1998).
19. J. Mäkinen, C. Corbel, P. Hautojärvi, P. Moser, and F. Pierre, Phys. Rev. B. 39, 10-162 (1989).
20. M. Fujinami, Phys. Rev. B. 53, 13-047 (1996).
21. M. Fujinami, A. Tsuge, and K. Tanaka, J. Appl. Phys. 79, 9017 (1996).
22. M. Hasegawa, Z. Tang, Y. Nagai, T. Nonaka, and K. Nakamura, Appl. Surf. Sci. 194, 76 (2002).
23. M. Alatalo, M. J. Puska, and R. M. Nieminen, Phys. Rev. B. 46, 12-806 (1992).
24. J. W. Corbett, J. K. Karins, and T. Y. Tan, Nucl. Instrum. Methods 182&183, 457 (1981).
25. F. Corni, C. Nobili, G. Ottaviani, R. Tonini, G. Calzolari, G. F. Cerofolini, and G. Queirolo, Phys. Rev. B. 56, 7331 (1997).
26. G. F. Cerofolini, L. Meda, C. Volpones, G. Ottaviani, J. DeFayette, R. Dierckx, D. Donelli, M. Orlandini, M. Anderle, R. Canteri, C. Claeys, and J. Vanhellemont, Phys. Rev. B. 41, 12-607 (1990).