Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing

Journal of Applied Physics

Volumn 90, Issue 8, 2001, Pages 3780-3786

  Duo, Xinzhong ^a   Liu, Weili ^a   Zhang, Miao ^a   Wang, Lianwei ^a   Lin, Chenglu ^a   Okuyama, M ^b   Noda, M ^b   Cheung, Wing Yiu ^c   Wong, S P ^c   Chu, Paul K ^d   Hu, Peigang ^e   Wang, S X ^f   Wang, L M ^f  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b OSAKA UNIVERSITY   (Japan)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^e FUDAN UNIVERSITY   (China)

^f UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886058     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1389478     Document Type: Article

References (18)

1. S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer. Berlin, 1992), and references therein.
2. Hydrogen in Semiconductor, edited by J. I. Pankove and N. M. Johnson (Academic, New York, 1990).
3. Dejects in Semiconductors 17, Materials Science Forum, edited by H. Heinrich and W. Jantsch (Trans-Tech, Switzerland, 1993), pp. 143-147.
4. G. F. Cerofolini, R. Balboni, D. Bisero, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, R. S. Brusa, A. Zecca, M. Ceschini, G. Giebel, and L. Pavesi, Phys. Status Solidi A 150, 539 (1995).
5. J. Wong-Leung, C. E. Ascheron, and M. Petravic, Appl. Phys. Lett. 66, 1231 (1995).
6. J. Wong-Leung, E. Nygren, and J. S. Williams, Appl. Phys. Lett. 67, 416 (1995).
7. J. Wong-Leung, J. S. Williams, and R. G. Elliman et al., Nucl. Instrum. Methods Phys. Res. B 96, 253 (1995).
8. M. Bruel, Electron. Lett. 31, 1201 (1995).
9. M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, and E. E. Chaban, J. Vac. Sci. Technol. B 15, 1065 (1997).
10. A. Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, and D. J. Eaglesham, Appl. Phys. Lett. 72, 1086 (1998).
11. G. F. Cerofolini, L. Meda, R. Balboni, F. Corni, S. Frabboni, G. Ottabviani, R. Tonini, M. Anderle, and R. Canteri, Phys. Rev. B 46, 2061 (1992).
12. R. S. Brusa, G. P. Karwasz, N. Tiengo, A. Zecca, F. Corni, G. Caliolari, and C. Nobili, J. Appl. Phys. 85, 2390 (1999).
13. R. S. Rrusa, M. Duarte Naia, A. Zecca, C. Nobili, G. Ottaviani, R. Tonini, and A. Dupasquier, Phys. Rev. B 49, 7271 (1994).
14. F. Corni, G. Calzolari, S. Frabboni, C. Nobili, G. Ottaviani, R. Tonini, G. F. Cerofolini, D. Leone, M. Servidori, R. S. Rrusa, G. P. Karwasz, N. Tiengo, and A. Zecca, J. Appl. Phys. 85, 1401 (1999).
15. D. Bisero, F. Corni, S. Frabboni, R. Tonini, G. Ottaviani, and R. Balboni, J. Appl. Phys. 83, 4106 (1998).
16. M. K. Weldon, (a) M. Collot, and Y. J. Chabal, V. C. Venezia, A. Agarwal,
17. (b) T. E. Haynes, D. J. Eaglesham, S. B. Christman, and E. E. Chaban, Appl. Phys. Lett. 73, 3721 (1998).
18. C. M. Varma, Appl. Phys. Lett. 71, 3519 (1997).