Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam

Thin Solid Films

Volumn 333, Issue 1-2, 1998, Pages 245-250

  Zhang, Miao ^a   Lin, Chenglu ^a   Weng, Huiming ^b   Scholz, R ^c   Gosele U ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c Max Plank Inst Microstructure Phys   (Germany)

Author keywords

Positron spectroscopy; Rutherford backscattering spectroscopy; Transmission electron microscopy; Vacancies

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; HELIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

CLUSTERS; POSITRON ANNIHILATION; VACANCIES;

ION IMPLANTATION;

EID: 0032204246     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00808-6     Document Type: Article

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