Thermal evolution of defects in H-implanted Si studied by monoenergetic positrons

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 19, 1998, Pages 12559-12562

  Fujinami, M ^a   Suzuki, R ^b   Ohdaira, T ^b   Mikado, T ^b  

^a NIPPON STEEL CORPORATION   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001654245     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.12559     Document Type: Article

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