Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor metal-oxide-semiconductor design

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2966-2971

  Le Roy, M ^a   Lheurette, E ^a   Vanbesien O ^b   Lippens, D ^b  

^a UNIVERSITÉ DE ROUEN   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; LEAKAGE CURRENTS; MOS DEVICES; NANOTECHNOLOGY; PERMITTIVITY; QUANTUM THEORY; TRANSISTORS; ULTRATHIN FILMS;

ULTRATHIN DIELECTRIC HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0037348077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544650     Document Type: Article

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