Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1801-1807

  Zhao, Yijie ^a   White, Marvin H ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

Direct tunneling; Gate current; High K dielectrics

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC MATERIALS; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTOR DOPING; SILICA; SILICON;

DIRECT TUNNELING; GATE CURRENTS; GATE STACKS; HIGH-K DIELECTRICS;

ELECTRON TUNNELING;

EID: 3142731607     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.016     Document Type: Conference Paper

References (11)

1. Vogel E.M., Ahmed K.Z., Hornung B., Henson W.K., Mclarty P.K., Lucovsky G., et al. Modeled tunnel currents for high dielectric constant dielectrics. IEEE Trans. Electron Device. 45(6):1998;1350.
2. Mudanai S., Fan Y., Ouyang Q., Tasch A.F., Banerjee S.K. Modeling of direct tunneling current through gate dielectric stacks. IEEE Trans. Electron Device. 47(10):2000;1851.
3. Lo S.H., Buchanan D.A., Taur Y., Wang W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's. IEEE Electron Device Lett. 18(5):1997;209.
4. Register L.F., Rosenbaum E., Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices. Appl. Phys. Lett. 74(3):1999;457.
5. Stern F. Self-consistent results for n-type Si inversion layers. Phys. Rev. B. 5(12):1972;4891.
6. Mueller H.H., Schulz M.J. Simplified method to calculate the band bending and the subband energies in MOS capacitors. IEEE Trans. Electron Devices. 44(9):1997;1539.
7. Hareland S.A., Krishnamurthy S., Jallepalli S., Yeap C.F., Hasnat K., Tasch A.F., et al. A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFET's. IEEE Trans. Electron Devices. 43(1):1996;90.
8. Wilk G.D., Wallace R.M., Anthony J.M. High-. k gate dielectrics: current status and materials properties Appl. Phys. Rev. 89(10):2001;5243.
9. Gusev E.P., Cartier E., Buchanan D.A., Gribelyuk M., Copel M., Okorn-Schmidt H., et al. Ultrathin high-. K metal oxides on silicon: processing, characterization and integration issues Microelectron. Eng. 59:2001;341.
10. 2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications. Microelectron. Eng. 69:2003;145.
11. Houssa M., Tuominen M., Naili M., Afanas'ev V., Stesmans A., Haukka S., et al. Trap-assisted tunneling in high permittivity gate dielectric stacks. J. Appl. Phys. 87(12):2000;8615.