Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1969-1978

  Fan, Yang Yu ^a   Nieh, Renee E ^a   Lee, Jack C ^a   Lucovsky, Gerry ^b   Brown, George A ^c   Register, Leonard Frank ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c SEMATECH   (United States)

Author keywords

High K gate dielectric; Leakage currents; MIS devices; MOSFETs; Semiconductor device modeling; Tunneling

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ENERGY GAP; GATES (TRANSISTOR); LEAKAGE CURRENTS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; THERMIONIC EMISSION; WAVE EQUATIONS;

GATE DIELECTRICS;

MOS CAPACITORS;

EID: 0036866914     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804713     Document Type: Article

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