A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Lazaro A ^a   Nae, B ^a   Moldovan, O ^a   Iiguez, B ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC LINES; GATES (TRANSISTOR); HYDRODYNAMICS;

CHARGE QUANTIZATION; NOISE SIMULATIONS; QUANTUM MODELS; VELOCITY EFFECTS;

MOSFET DEVICES;

EID: 33750511591     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360379     Document Type: Article

References (42)

1. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, IEEE Electron Device Lett. 8, 410 (1987).
2. J. G. Fossum, L. Ge, and M. H. Chiang, IEEE Trans. Electron Devices 49, 808 (2002).
3. K. Kim and J. G. Fossum, IEEE Trans. Electron Devices 48, 294 (2001).
4. J. G. Fossum, L. Ge, M. H. Chiang, and B. Y. Nguyen, Solid-State Electron. 48, 919 (2004).
5. Y. Taur, IEEE Trans. Electron Devices 48, 2861 (2001).
6. P. Francis, A. Terao, D. Flandre, and F. Van de Wiele, J. Appl. Phys. 76, 5989 (1994).
7. P. Francis, A. Terao, D. Flandre, and F. Van de Wiele, IEEE Trans. Electron Devices 41, 715 (1994).
8. J.-M. Sallese, F. Krummenacher, F. Pregaldiny, C. Lallement, A. Roy, and C. Enz, Solid-State Electron. 49, 485 (2004).
9. L. Ge, J. G. Fossum, and B. Liu, IEEE Trans. Electron Devices 48, 2074 (2001).
10. G. Mugnaini and G. Iannaccone, IEEE Trans. Electron Devices 52, 1795 (2005).
11. Z. Song, J. Jiang, and C. Qiyu, Solid-State Electron. 49, 1951 (2005).
12. D. Lederer, V. Kilchytska, T. Rudenko, N. Collaert, D. Flandre, A. Dixit, K. D. Meyer, and J.-P. Raskin, Solid-State Electron. 49, 1488 (2005).
13. A. Breed and K. P. Roenker, Proceedings of IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE, Atlanta, 8-10 September 2004, pp. 294-297.
14. D. Lederer, R. Lobet, and J.-P. Raskin, Proceedings of IEEE International SOI Conference, IEEE, Charleston, 4-7 October 2004, pp. 46-47.
15. C. Fiegna and A. Abrano, Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, IEEE SISPAD, Cambridge, September 1997, pp. 93-96.
16. D. Vasileska and Z. Ren, SCHRED-2.0 Manual (Arizona State University Press, Tempe, AZ, 2000).
17. G. Baccarani and S. Reggiani, IEEE Trans. Electron Devices 46, 1656 (1999).
18. J. A. López-Villanueva, P. Cartujo-Cassinello, F. Gámiz, J. Banqueri, and A. J. Palma, IEEE Trans. Electron Devices 47, 141 (2000).
19. V. P. Trivedi, J. G. Fossum, and F. Gamiz, Tech. Dig. - Int. Electron Devices Meet. 2004, 763.
20. L. Ge and J. G. Fossum, Proceedings of IEEE International SOI Conference, IEEE, Massachusetts, October 2000, pp. 114-115.
21. L. Ge and J. G. Fossum, IEEE Trans. Electron Devices 49, 287 (2002).
22. D. Jiḿnez, J. Sáenz, B. Iíguez, J. Sú, L. F. Marsal, and J. Pallar̀s, IEEE Electron Device Lett. 25, 314 (2004).
23. B. Iíguez, D. Jiḿnez, J. Roig, H. A. Hamid, L. F. Marsal, and J. Pallar̀s, IEEE Trans. Electron Devices 52, 1868 (2005).
24. B. Iíguez, A. Lázaro, H. A. Hamid, G. Pailloncy, G. Dambrine, and F. Danneville, Proceedings of 18th International Conference on Noise and Fluctuations (ICNF 2005), AIP Conf. Proc. No. 780 (AIP, Melville, 2005), pp. 269-274.
25. G. Pailloncy B. Iníguez, G. Dambrine, J.-P. Raskin, and F. Danneville, Solid-State Electron. 48, 813 (2004).
26. F. Danneville, G. Dambrine, H. Happy, P. Tadyszak, and A. Cappy, Solid-State Electron. 38, 1081 (1995).
27. G. Pailloncy, B. Iíguez, G. Dambrine, and F. Danneville, Proceedings of IEEE International SOI Conference, IEEE, Charleston, 4-7 October 2004, pp. 55-57.
28. B. Iíguez, A. Lázaro, and O. Moldovan, Proceedings of the 1st European Microwave Integrated Circuits Conference (EuMIC), IEEE, Manchester, UK, September 2006, pp. 213-216.
29. B. Iíguez, T. A. Fjeldly, A. Lázaro, F. Danneville, and M. J. Deen, IEEE Trans. Electron Devices 53, 2128 (2006).
30. A. Lázaro and B. Iíguez, Solid-State Electron. 50, 826 (2006).
31. A. S. Roy, C. C. Enz, and J.-M. Sallese, IEEE Trans. Electron Devices 53, 348 (2006).
32. A. Van der Ziel, Noise in Solid State Devices and Circuits (Wiley, New York, 1986).
33. A. S. Roy and C. C. Enz, IEEE Trans. Electron Devices 52, 611 (2005).
34. J. R. Baker and D. K. Ferry, Solid-State Electron. 23, 519 (1980).
35. J. P. Nougier and M. Rolland, J. Appl. Phys. 48, 1683 (1977).
36. K. Seeger, Semiconductor Physics (Springer-Verlag, New York, 1973).
37. J. C. Ranuárez, M. J. Deen, and C.-H. Chen, IEEE Electron Device Lett. 26, 550 (2005).
38. K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices 41, 761 (1994).
39. A. Lázaro, L. Pradell, and J. M. O'Callaghan, IEEE Trans. Microwave Theory Tech. 47, 315 (1999).
40. H. Hillbrand and P. Russer, IEEE Trans. Circuits Syst. 23, 235 (1976).
41. A. Bansal, B. C. Paul, and K. Roy, IEEE Trans. Electron Devices 52, 256 (2005).
42. R. S. Shenoy and K. C. Saraswat, IEEE Trans. Nanotechnol. 2, 265 (2003).