Novel compact model of quantum effects in scaled SOI and double-gate MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 114-115

  Ge, Lixin ^a   Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); MOSFET DEVICES; THIN FILM DEVICES; THRESHOLD VOLTAGE;

QUANTUM EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034471033     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)