Noise modeling in fully depleted SOI MOSFETs

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 813-825

  Pailloncy, G ^a   Iniguez, B ^b   Dambrine, G ^a   Raskin, J P ^c   Danneville, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Active line; High frequency noise; MOSFETs; SOI

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CORRELATION METHODS; ELECTRIC ADMITTANCE; ELECTRIC FIELDS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MATRIX ALGEBRA; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

ACTIVE LINE; HIGH FREQUENCY NOISE; SOI;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1242276400     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.032     Document Type: Article

References (13)

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