A small-signal, RF simulation study of multiple-gate and silicon-on-insulator MOSFET devices

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Volumn , Issue , 2004, Pages 294-297

  Breed, Aniket A ^a   Roenker, Kenneth P ^a  

^a 705 Engineering Research Center   (United States)

Author keywords

FinFET; MOSFET; Multi Gate FETs; RF performance; Silicon on Insulator; TriGate

Indexed keywords

FINFET; MULTI-GATE FETS; RF PERFORMANCE; SILICON-ON-INSULATORS; TRIGATE;

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC INSULATORS; GAIN CONTROL; PERFORMANCE; SILICON;

MOSFET DEVICES;

EID: 20344401370     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur and H-S. P. Wong, "Device scaling limits of Si MOSFETs and their dependencies," Proc. IEEE, vol. 89 (3). pp. 259-287, 2001.
2. S. Cristoloveanu, "Silicon on insulator technologies and devices: from present to future," Solid-State Electr., vol. 45. pp. 1403-1411, 2001.
3. J-T. Park and J-P. Colinge, "Multiple-Gate SOI MOSFETs: Device Design Guidelines." IEEE Trans. Electron Devices, vol. 49 (12), pp. 2222-2228, Dec. 2002.
4. D. Hisamoto and C. Hu, "FinFET-A self-aligned double-gate MOSFET scalable to 20nm," IEEE Trans. Electron Devices, vol. 47 (12), pp. 2320-2325, 2000.
5. R. Chau, B. Doyle and S. Datta, "Silicon nano-transistors for logic applications." Phys. Rev. Lett., vol. 19 (1-2), pp. 1-5, 2003.
6. J-J. Liou and F. Schwierz, "RF MOSFET: recent advances, current status and future trends," Solid-State Electr., vol. 47, pp. 1881-1895, 2003.
7. ATLAS Numerical Device Simulator, SILVACO© International, Santa Clara, CA, 2004.
8. P. H. Woerlee, M. J. Knitel, R. van Langevelde, D. B. M. Klaassen, L. F. Tiemeijer, a. J. Scholten and A. Ta. A. Zegers-van Duijnhoven, "RF-CMOS performance trends," IEEE Trans. Electron Devices, vol. 48 (8), pp. 1776-1782, 2001.