Modeling of nanoscale gate-all-around MOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 314-316

  Jimenez D ^a   Saenz J J ^b   Iniguez B ^a   Sune J ^a   Marsal, L F ^a   Pallares J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Modeling; MOSFETs; Quantum wires

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; FERMI LEVEL; GATES (TRANSISTOR); POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WIRES;

LANDAUER TRANSMISSION THEORY; SUBBAND;

MOSFET DEVICES;

EID: 2442474275     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826526     Document Type: Letter

References (9)

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