Effect of nitridation on low-frequency (1/f) noise in n- and p-MOSFETS with HFO2 gate dielectrics

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Srinivasan, P ^a,b   Simoen, E ^a,e   Rittersma, Z M ^c   Deweerd, W ^a   Pantisano, L ^a   Claeys, C ^a,d,e   Misra, D ^b,e  

^a IMEC   (Belgium)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; DIELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTOR DEVICES; TRANSISTORS;

CARRIER TRAPPING; INTERFACIAL LAYERS; NITRIDATION EFFECTS; NON-NITRIDED INTERFACES;

MOSFET DEVICES;

EID: 33750093903     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2216455     Document Type: Article

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