Low-frequency (1f) noise performance of n- and p-MOSFETs with poly-SiHf-based gate dielectrics

Journal of the Electrochemical Society

Volumn 153, Issue 4, 2006, Pages

  Srinivasan, P ^a,b,d   Simoen, E ^a,d   Pantisano, L ^a,d   Claeys, C ^a,c,d   Misra, D ^b,d  

^a IMEC   (Belgium)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUCTUATIONS MECHANISM; GATE DIELECTRICS; GATE OXIDES; SURFACE TRAP DENSITIES;

ACOUSTIC NOISE; GATES (TRANSISTOR); HAFNIUM; POLYSILICON; SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 33644809887     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2170549     Document Type: Article

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