On the Si-Si O2 interface trap time constant distribution in metal-oxide-semiconductor transistors

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Manglia Y ^a   Rahmoune, F ^a   Bauza, D ^a  

^a Institut de Micrólectronique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER EMISSION; CHARGE PUMPING (CP) TECHNIQUES; INTERFACE TRAP DENSITY; NOISE SPECTROSCOPY;

ACTIVATION ENERGY; ATTENUATION; DIELECTRIC MATERIALS; INTEGRATION; MATHEMATICAL MODELS; MOS DEVICES; MULTIPHOTON PROCESSES; THRESHOLD VOLTAGE;

SILICON;

EID: 19944432949     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1813637     Document Type: Article

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