Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 226-229

  Srinivasan, P ^a,b   Simoen, E ^a   Pantisano, L ^a   Claeys, C ^a,c   Misra, D ^b  

^a IMEC   (Belgium)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Hf silicates; High K; LF noise; Metal gates; Mobility fluctuations; Number fluctuations

Indexed keywords

ACOUSTIC NOISE; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

HF SILICATES; HIGH-K; LF NOISE; METAL GATES; MOBILITY FLUCTUATIONS; NUMBER FLUCTUATIONS; SPECTRAL DENSITY;

MOSFET DEVICES;

EID: 19944381220     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.029     Document Type: Conference Paper

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