The effects of nitrogen in HfO2 for improved MOSFET performance

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 68-69

  Cho, H J ^a   Kang, C Y ^a   Kang, C S ^a   Choi, R ^a   Kim, Y H ^a   Akbar, M S ^a   Choi, C H ^a   Rhee, S J ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM OXIDES; INTERFACES (MATERIALS); NITROGEN; SEMICONDUCTOR DEVICES; SILICATES; SILICON NITRIDE;

DEVICE PERFORMANCE; HF SILICATE; HIGH- K; HIGH-K DIELECTRIC; MOSFET PERFORMANCE; NITROGEN CONCENTRATIONS; SI SUBSTRATES; TOP LAYERS;

MOSFET DEVICES;

EID: 84945306444     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1271999     Document Type: Conference Paper

References (4)

1. A.L.P. Rotondaro et al., VLSI, p. 148, 2002.
2. M. Koyama et al., IDEM, p. 849, 2002.
3. S. Inumiya et al., VLSI, p. 15, 2003.
4. Y. Morisaki et al., IEDM, p. 861, 2002.