Accurate multibias equivalent-circuit extraction for GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 10, 2006, Pages 3616-3621

  Crupi, Giovanni ^b,c,d   Xiao, Dongping ^d,e   Schreurs, Dominique M M P ^a,d   Limiti, Ernesto ^a,b   Caddemi, Alina ^c   De Raedt, Walter ^e   Germain, Marianne ^e  

^a IEEE

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c UNIVERSITY OF MESSINA   (Italy)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e IMEC   (Belgium)

Author keywords

Gallium nitride; High electron mobility transistor (HEMT); Multibias; Small signal model

Indexed keywords

CHANNEL CAPACITANCE; MULTIBIAS; SMALL-SIGNAL MODELS;

CAPACITANCE; COMPUTER SIMULATION; ELECTRON SCATTERING; GALLIUM NITRIDE; MATHEMATICAL MODELS; NETWORKS (CIRCUITS);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33749861138     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.882403     Document Type: Article

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