A technique for extracting small-signal equivalent-circuit elements of HEMTs

IEICE Transactions on Electronics

Volumn E82-C, Issue 11, 1999, Pages 1968-1975

  Jeon, Manyoung ^a,b   Kim, Byung Gyu ^a   Jeon, Young Jin ^a   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Memory Design Department   (South Korea)

Author keywords

Cold hemt; Equivalent circuit; Hemt characterization; Parameter extraction

Indexed keywords

EID: 1642627654     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory & Tech., vol.36, pp.1151-1159, July 1988.
2. R. Vogel, "The application of RF wafer probing to MESFET modeling," Microw. J., vol.31, pp.153-162, Nov. 1988.
3. M. Berroth and R. Bosch, "Broad-band determination of the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory & Tech., vol.38, pp.891-895, July 1990.
4. R. Anholt and S. Swirhun, "Equivalent-circuit parameter extraction for cold GaAs MESFET's," IEEE Trans. Microwave Theory & Tech., vol.39, pp.1243-1247, July 1991.
5. J.C. Costa, M. Miller, M. Golio, and G. Norris, "Fast, accurate, on-wafer extraction of parasitic resistances and inductances," IEEE MTT-S Int. Microwave Symp. Dig., pp.1011-1014, Dig. Albuquerque, NM, 1992.
6. H. Sledzik and I. WolfF, "A new approach to nonlinear modelling and simulation of MESFET's and MODFET's," Proc. 20th European Microwave Conf., pp.784-789, Budapest, Hungary, 1990.
7. A. Miras and E. Legros, "Very high-frequency small-signal equivalent circuit for short gate-length InP HEMT's," IEEE Trans. Microwave Theory & Tech., vol.45, pp.1018-1026, July 1997.
8. R. Tayrani, J.E. Gerber, T. Daniel, R.S. Pengelly, and U.L. Rhode, "A new and reliable direct parasitic extraction method for MESFET's and HEMT's," Proc. 23rd European Microwave Conf., pp.451-453, Madrid, 1993.
9. T.P. Hettmansperger, Statistical Inference Based on Ranks, Chap.5, John Wiley & Sons, New York, 1984.
10. G. Kompa and M. Novotony, "Highly consistent FET model parameter extraction based on broadband S-parameter measurement," IEEE MTT-S Int. Microwave Symp. Dig., pp.293-290, Albuquerque, NM, 1992.
11. Y.T. Tsai and T.A. Grotjohn, "Source and drain resistance studies of GaAs MESFET's," IEEE Trans. Electron Devices, vol.37, pp.775-781, March 1990.
12. Y.H. Byun, M.S. Shur, A. Peczalski, and F.L. Schuermeyer, "Gate voltage dependence of source and drain resistances," IEEE Trans. Electron Devices, vol.35, pp.1241-1247, Aug. 1988.
13. V. Sommer, "A new method to determine the source resistance of FET from measured S-parameters under activebias conditions," IEEE Trans. Microwave Theory & Tech., vol.43, pp.504-510, March 1995.
14. F. Diamand and M. Laviron, "Measurement of the extrinsic series elements of a microwave MESFET under zero current conditions," Proc. 12th European Microwave Conf., pp.451-456, Warzawa, 1982.
15. Kurt Lehovec, "Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C-V and Q-V analysis," Appl. Phys. Lett., vol.25, pp.279-281, Sept. 1974.
16. K.W. Lee, K. Lee, M.S. Shur, T.T. Vu, P.C.T. Roberts, and M.J. Helix, "Source, drain, gate series resistances and electron saturation velocity in ion-implanted GaAs FET's," IEEE Trans Electron Devices, vol.32, pp.987-992, May 1985.
17. K. Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaki, Y. Ohashi, T. Saito, and Y. Daido, "An approach to determining an equivalent circuit for HEMT's," IEEE Trans. Microwave Theory & Tech., vol.43, pp.499-503, March 1995.