Characteristics of microwave power GaN HEMTs on 4-inch Si wafers

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 449-452

  Manohar, S ^a   Narayanan, A ^a   Keerti, A ^a   Pham, A ^a   Brown, J ^b   Borges, R ^b   Linthicum, K ^b  

^a AMRL   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LITHOGRAPHY; MICROWAVE DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON WAFERS;

MAXIMUM DRAIN CURRENT; MICROWAVE OUTPUT POWER DENSITY; MICROWAVE POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036076201     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011652     Document Type: Article

References (6)

1. Role of surface passivation on the power optimization on AlGaN/GaN HEMTs
2. High-power microwave AlGaN/GaN HEMT’s on semi-insulating silicon carbide substrates
3. AlGaN/GaN HFETs fabricated on 100nm GaN on silicon (111) substrates
4. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
5. Status of the surface and bulk parasitic effects limiting the performances of GaAs IC’s
6. AlGaN/GaN high electron mobility transistors on Si (111) substrates