Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K

IEEE Transactions on Instrumentation and Measurement

Volumn 55, Issue 2, 2006, Pages 465-470

  Caddemi, Alina ^a   Crupi, Giovanni ^a   Donato, Nicola ^a  

^a UNIVERSITY OF MESSINA   (Italy)

Author keywords

Cryogenic electronics; Microwave FETs; Scattering parameters measurement; Semiconductor device modeling; Two port circuits

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; LOW TEMPERATURE EFFECTS; MICROWAVE AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

CRYOGENIC ELECTRONICS; MICROWAVE FIELD EFFECT TRANSISTORS; SCATTERING PARAMETERS MEASUREMENT; TWO-PORT CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33645311242     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2006.864248     Document Type: Article

References (17)

1. N. Donato, A. Caddemi, G. Crupi, and E. Calandra, "Microwave characterization and modeling of packaged HEMT's by a direct extraction procedure down to cryogenic temperature," in Proc. IEEE Int. Conf. Instrumentation and Measurement Technology, Como, Italy, May 2004, vol. 3, pp. 2208-2211.
2. M. Y. Jeon, B. G. Kim, Y. J. Jeon, and Y. H. Jeong, "A technique for extracting small-signal equivalent-circuit elements of HEMTs," IEICE Trans. Electron., vol. E82-C, no. 11, pp. 1968-1976, Nov. 1999.
3. S. Yanagawa, H. Ishihara, and M. Ohtomo, "Analytical method for determining equivalent circuit parameters of GaAs FETs," IEEE Trans. Microw. Theory Tech., vol. 44, no. 10, pp. 1637-1641, Oct. 1996.
4. G. Dambrine, A. Cappy, F. Heliodorf, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. 36, no. 7, pp. 1151-1159, Jul. 1988.
5. F. Lin and G. Kompa, "FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search - A new concept," IEEE Trans. Microw. Theory Tech., vol. 42, no. 7, pp. 1114-1121, Jul. 1994.
6. K. Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaki, Y. Ohashi, T. Saito, and Y. Daido, "An approach to determining an equivalent circuit for HEMT's," IEEE Trans. Microw. Theory Tech., vol. 43, no. 3, pp. 499-503, Mar. 1995.
7. W. R. Curtice and R. L. Camisa, "Self-consistent GaAs FET models for amplifier design and device diagnostics," IEEE Trans. Microw. Theory Tech., vol. MTT-32, no. 12, pp. 1573-1578, Dec. 1984.
8. A. Caddemi, G. Crupi, and N. Donato, "A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs," Microelectron. J., vol. 35, no. 5, pp. 431-436, May 2004.
9. G. Crupi and N. Donato, "Bias and temperature dependent modeling of on wafer HEMT's by a direct and fast procedure," in Proc. IEEE Conf. Int. Symp. Industrial Electronics (ISIE), Ajaccio, France, May 2004, pp. 1543-1548.
10. M. Berroth and R. Bosch, "Broad-band determination of the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. 38, no. 7, pp. 891-895, Jul. 1990.
11. R. Tayrani, J. E. Gerber, T. Daniel, R. S. Pengelly, and U. L. Rhode, "A new and reliable direct parasitic extraction method for MESFET's and HEMT's," in Proc. 23rd Eur. Microwave Conf., Madrid, Spain, Sep. 1993, pp. 451-453.
12. H. O. Vickes, "Determination of intrinsic FET parameters using circuit partitioning approach," IEEE Trans. Microw. Theory Tech., vol. 39, no. 2, pp. 363-366, Feb. 1991.
13. N. Rorsman, M. Garcia, C. Karlsson, and H. Zirath, "Accurate small-signal modeling of HFET's for millimeter-wave applications," IEEE Trans. Microw. Theory Tech., vol. 44, no. 3, pp. 432-437, Mar. 1996.
14. D. M. Pozar, Microwave Engineering. New York: Wiley, 1998.
15. Y. A. Khalaf, "Systematic optimization technique for MESFET modeling," Ph.D. dissertation, Dept. Elect. Comput. Eng., Virginia Polytechnic Inst. State Univ., Blacksburg, 2000.
16. Maury Microwave Corporation, Model MT950G Transistor Test Fixture, Operating Manual, 2001.
17. A. Belachè, A. Vanoverschelde, G. Salmer, and M. Wolny, "Experimental analysis of HEMT behavior under low-temperature conditions," IEEE Trans. Electron Devices, vol. 38, no. 1, pp. 3-13, Jan. 1991.