Determination of small-signal parameters of GaN-based HEMTs

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 115-122

  Chigaeva, E ^a   Walthes, W ^a   Wiegner, D ^a   Grozing M ^a   Schaich, F ^a   Wieser, N ^a   Berroth, M ^a   Breitschadel O ^a   Kley, L ^a   Kuhn, B ^a   Scholz, F ^a   Schweizer, H ^a   Ambacher, O ^b   Hilsenbeck, J ^c  

^a UNIVERSITY OF STUTTGART   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LINES; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; OHMIC CONTACTS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH GATE VOLTAGE; SERIES RESISTANCES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034594104     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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7. M. Berroth and R. Bosch, "Broad-Band Determination of the FET Small-Signal Equivalent Circuit", IEEE Trans. Microwave Theory Techn., vol 38, pp. 891-895, 1990.