Analytical method for determining equivalent circuit parameters of GaAs FET's

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 10 PART 1, 1996, Pages 1637-1641

  Yanagawa, Shigeru ^a,b   Ishihara, Hiroshi ^b   Ohtomo, Motoharu ^c  

^a IEEE

^b TOSHIBA CORPORATION   (Japan)

^c Tokyo City Universtiy   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FREQUENCIES; GATES (TRANSISTOR); MATHEMATICAL MODELS; NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE;

CONTROL VOLTAGE; CURTICE MODEL; EIGHT ELEMENT MODELS; EQUIVALENT CIRCUIT PARAMETERS; S PARAMETER MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 0030258468     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.538954     Document Type: Article

References (8)

1. W. R. Cunice and R. L. Camisa, ''Self-consistent GaAs FET models for amplifier design and device diagnostics.1' IEEL Trans. Microwave Theory Tech-, vol. MTT-32, no. 12, pp. 1573-1578. Dec. 1984.
2. S. Bandla, G. Dawc. C. Bcdard, R. Tavrani, D. Shaw, L. Raffaelli, and R. Goldwasser, A 35 GHz monolithic MESFET LNA, in IEEE MTT-S Dig., 1988. pp. 259-263.
3. G, Kompa and M. Novotny, Highly consistent FET model parameter extraction based on broadband S parameter measurements, in IEEE MTT-S Dig., 1992, pp. 293-296.
4. G. Dambrinc, A. Cappy, F. Hcliodone, and E. Playez, A new method for determining the FET small-signal equivalent circuit, IEEE Tram. Microwave Theory Tech., vol. 36. no. 7, pp. 1151-1159, July 1988.
5. R. Anholt and S. Swirhun, Equivalent-circuit parameter extraction for cold GaAs MESFET's, IEEE Trans. Microwave Theory Tech., vol. 39, no. 7, pp. 1243-1247, July. 1991.
6. H. Sled/ik and I. Wolft, A new approach to nonlinear modeling and simulation of MESFET's and MODFET's, in Proc. 20th Euro. Microwave Conf., 1990. pp. 784-789.
7. H. O. Vickes, Determination of intrinsic FET parameters uung circuit partitioning approach, IEEE Trans. Microwave Theory Tech., vol 39, no. 2. pp. 363-366, Feb. 1991.
8. S. Akhtar and S. Tiwari Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET's with emphasis on distributed effects. IEEE Trans. Electron Devices, vol. 40, no. 12, pp. 2154-2163, Dec. 1993.