An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 5 PART 1, 1997, Pages 700-703

  Chen, Shen Whan ^a   Aina, Olaleye ^a   Li, Weiqi ^a   Lee Phelps, ^a   Lee Tim, ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES;

INTERDIGITATED POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031143085     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.575590     Document Type: Article

References (6)

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2. B. Hughes and H. Kondoh, "12-GHz low-noise MMIC amplifier designed with a noise model that scales with MODFET size and bias," IEEE Trans. Microwave Theory Tech., vol. 41, pp. 2311-2316, Dec. 1993.
3. P. M. White and R. M. Healy, "Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from 'Coldfet' m measurements," IEEE Microwave Guided Wave Lett., pp. 453-154, Dec. 1993.
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5. E. Yang and S. I. Eong, "New method to measure the source and drain resistance of the GaAs MESFET," IEEE Electron Device Lett., vol. EDE-7, p. 75-77, Feb. 1986.
6. M. Berroth and R. Bosh, "Broad-band determination of the FET smallsignal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 891-895, July 1990.