A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature

6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings

Volumn 2, Issue , 2003, Pages 557-560

  Caddemi, Alina ^a   Donato, Nicola ^a   Crupi, Giovanni ^a  

^a UNIVERSITY OF MESSINA   (Italy)

Author keywords

Direct Extraction Modeling; HEMT; MESFET; Temperature

Indexed keywords

BROADCASTING; CABLES; EXTRACTION; MESFET DEVICES; MICROWAVE DEVICES; MOSFET DEVICES; TEMPERATURE;

AUTOMATED MEASUREMENT; CIRCUIT ELEMENTS; DIRECT EXTRACTION; DIRECT POLARIZATION; INSULATED GATE; MESFET; MICROWAVE TRANSISTORS; ROBUST APPROACHES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84905180028     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TELSKS.2003.1246287     Document Type: Conference Paper

References (4)

1. B. Tayrani, "Reliably Extract MESFET and HEMT Parameters", Microwave &RF., pp. 131-135, June.1993
2. M. Berroth and R. Bosch, "Broad-Band Determination of the FET Small-Signal Equivalent Circuit", IEEE Trans. Microwave Theory Tech., Vol. MTT-38, pp. 891-895, July.1990
3. G. Dambrine, A, Cappy, F. Heliodorf and E. Playez, "A New Method for Determining the Fet Small-Signal Equivalent Circuit" IEEE Trans. Microwave Theory Tech., Vol. MTT-36, pp. 1151-1159, July. 1988.
4. A. Caddemi and N. Donato, 'Temperature-dependent characterization and modeling of on wafer microwave transistors", Microelectronics Reliability, vol.42, pp.361-366, Apr. 2002.