Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 737-742

  Vandamme, Ewout P ^a,b,c   Schreurs, Dominique M M P ^c   Van Dinther, Cees ^d  

^a IEEE   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Integrated circuit modeling; Microwave measurements; MOSFETs; Nonlinear network measurement system (NNMS); Scattering parameters measurement; Semiconductor device measurements; Semiconductor device modeling

Indexed keywords

NONLINEAR NETWORK MEASUREMENT SYSTEM (NNMS); PAD PARASITICS;

INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; NONLINEAR NETWORK ANALYSIS; SCATTERING PARAMETERS; SUBSTRATES;

SILICON WAFERS;

EID: 0035307256     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915712     Document Type: Article

References (10)

1. R .F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model
2. The high-frequency analogue performance of MOSFETs
3. A nonlinear microwave MOSFET model for spice simulators
4. A three step method for the de-embedding of high frequency S-parameter measurements
5. Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal port of a nonlinear microwave device
6. Reliable extraction of RF figures-of-merit for MOS-FETs
7. Consistent small-signal and large-signal extraction techniques for heterojunction FET's