A small-signal linear equivalent circuit of hemt's fabricated on gaas-on-si wafers

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 5, 1996, Pages 668-673

  Goto, Mitsuhiko ^a   Ohta, Yasumitsu ^a   Aigo, Takashi ^a   Moritani, Akihiro ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; INTERFACES (MATERIALS); MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

SMALL SIGNAL LINEAR EQUIVALENT CIRCUITS; SUBSTRATE RESISTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030149001     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.493919     Document Type: Article

References (21)

1. T. Aigo. H. Yashiro, A. Jono, A. Tachikawa, and A. Moritani, Comparison of electronic characteristics and thermal resistance for HEMT's grown on GaAs and Si substrates, Electronics Lett., vol. 28, no. 18, pp. 1737-1738, Aug. 1992.
2. K. Ohtsuka and H. Nakanishi, Practical GaAs power SBD using GaAs/Si wafer, in Proc. 19th Int. Symp. Gallium Arsenide and Related Compounds, Sept. 28-Oct. 2, 1992, Karuizawa, Japan, pp. 881-886.
3. T. Aigo, H. Yashiro, M. Goto, A. Jono, A. Tachikawa, and A. Moritani, Thermal resistance and electronic characteristics for high electron mobility transistors grown on Si and GaAs substrates by metal-organic chemical vapor deposition, Japanese J. Appl. Physics, vol. 32, Part 1, no. 12A, pp. 5508-5513, Dec. 1993.
4. [4J R. J. Fischer, J. Klem, C.-K. Peng, J. S. Gedymin, and H. Markoç, Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates, IEEE Electron Device Lett., vol. EDL-7, no. 2, pp. 112-114, Feb. 1986.
5. R. J. Fischer, N. Chand, W. F. Kopp, C.-K. Peng, H. Markoç, K. R. Gleason, and D. Scheitlin, A DC and microwave comparison of GaAs MESFET's on GaAs and Si substrates, IEEE Trans. Electron Devices, vol. ED-33, no. 2, pp. 206-213, Feb. 1986.
6. R. J. Fischer, W. F. Kopp, J. S. Gedymin, and H. Markoç, Properties of MODFET's grown on Si substrates at DC and microwave frequencies, IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1407-1412, Oct. 1986.
7. M. I. Aksun, H. Markoç, L. F. Lester, K. H. G. Duh, P. M. Smith, P. C. Chao, M. Longerbone, and L. P. Erickson, Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates, Appl. Physics Lett., vol. 49. no. 24, pp. 1654-1655, Dec. 1986.
8. |8J M. N. Charasse, B. Bartenlian, B. Gérard, J. P. Hirtz, M. Laviron, A. M. de Parscau, M. Derevonko, and D. Delagebeaudeuf, 12 GHz high power GaAs/Si MESFET's, Japanese J. Appl. Physics, vol. 28, no. 11, pp. L1896-L1898, Nov. 1989.
9. T. Aigo, M. Goto, A. Jono, A. Tachikawa, and A. Moritani, Evaluation of Vth uniformities and fy for HEMT/Si fabricated using GaAs/AlGaAs selective dry etching, in Proc. 20th Int. Symp. Gallium Arsenide and Related Compounds, Aug. 29-Sept. 2, 1993, Freiburg, Germany, pp. 87-92.
10. T. Aigo, A. Jono, A. Tachikawa, R. Hiratsuka, and A. Moritani, High uniformity of threshold voltage for GaAs/AlGaAs high electron mobility transistors grown on a Si substrate, Appl. Phvsics Lett., vol. 64, no. 23, pp. 3127-3129, June 1994.
11. H. Shichijo, J. W. Lee, W. V. McLevige, and A. H. Taddiken, GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate, Electron Device Lett., vol. EDL-8, no. 3, pp. 121-123, Mar. 1987.
12. F. Ren, N. Chand, Y.-K. Chen, S. Pearton, D. M. Tennant, and D. J. Resnick, High-performance AlGaAs/GaAs SDHT's and ring oscillators grown by MBE on Si substrate, Electron Device Lett., vol. EDL-10, no. 12, pp. 559-561, Dec. 1989.
13. M. Berroth and R. Busch, High-frequency equivalent circuit of GaAs FET's for large-signal applications, IEEE Trans. Microwave Theory Tech., vol. 39, no. 2, pp. 224-229, Feb. 1991.
14. Yoshihiro Konishi, Ed., Microwave Integrated Circuits. New York: Marcel Dekker, 1991, pp. 244-245 and 267-269.
15. M. Akiyama, A study in hetero-epitaxial growth of GaAs on Si substrates by metal-organic chemical vapor deposition, Ph.D. dissertation, 1991, pp. 58-59, in Japanese.
16. D. Costa, W. U. Liu, and J. S. Harris, Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit, IEEE Trans. Electron Devices, vol. 38, no. 9, pp. 2018-2024, Sept. 1991.
17. P. J. van Wijnen, H. R. Ciaessen, and E. A. Wolsheimer, A new straightforward calibration and correction procedure for 'on wafer' high frequency S-parameter measurements (45MHz-18GHz), in IEEE 1987 Bipolar Circuits Technol. Meet., 1987, pp. 70-73.
18. G. Dambrine, A. Gappy, F. Heliodore, and E. Playez, A new method for determining the FET small-signal equivalent circuit, IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1151-1159, July 1988.
19. L. Yang and S. I. Long, New method to measure the source and drain resistance of the GaAs MESFET, IEEE Electron Device Lett., vol. EDL-7, no. 2, pp. 75-77, Feb. 1986.
20. K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts, and M. M. Helix, Source, drain, and gate series resistance and electron saturation velocity in ion-implanted GaAs FET's, IEEE Trans. Electron Devices, vol. ED-32, no. 5, pp. 987-992, May 1985.
21. T. Aigo, M. Goto, Y. Ohta, A. Jono, A. Tachikawa, and A. Moritani, Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates, IEEE Trans. Electron Devices, to be published.