GaN based heterostructure for high power devices

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1555-1559

  Asif Khan, M ^a   Chen, Q ^a   Shur, Michael S ^b   Dermott, B T ^c   Higgins, J A ^c   Burm, J ^d   Schaff, W J ^d   Eastman, L F ^d  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

^c ROCKWELL SCIENCE CENTER   (United States)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ENERGY GAP; FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE OPERATIONS; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

WIDE BAND GAP SEMICONDUCTOR DEVICES;

HETEROJUNCTIONS;

EID: 0031250249     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00104-4     Document Type: Article

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