A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 I, 2003, Pages 468-474

  Orzati, Andrea ^a   Schreurs, Dominique M M P ^b   Pergola, Luca ^a   Benedickter, Hansruedi ^a   Robin, Franck ^a   Homan, Otte J ^a   Bächtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Impact ionization; InP high electron mobility transistors (HEMTs); Large signal model

Indexed keywords

COMPUTER SIMULATION; IMPACT IONIZATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; TABLE LOOKUP;

NONLINEAR DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037291685     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807823     Document Type: Article

References (14)

1. M. H. Somerville, J. A. del Alamo, and W. Hoke, "Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs," IEEE Electron Device Lett., vol. 17, pp. 473-475, Oct. 1996.
2. D. E. Root, S. Fan, and J. Meyer, "Technology independent large signal non quasistatic FET models by direct construction from automatically characterized device data," in Proc. 21th Eur. Microwave Conf., 1991, pp. 927-932.
3. C. J. Wei, Y. A. Tkachenko, and D. Bartle, "Table-based dynamic FET model assembled from small-signal models," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 700-705, June 1999.
4. P. J. Tasker and J. Braunstein, "New MODFET small-signal circuit model required for millimeter-wave MMIC design: Extraction and validation to 120 GHz," in IEEE MTT-S Int. Microwave Symp. Dig., 1995, pp. 611-614.
5. J. Wood and D. Root, "Bias-dependent linear, scalable millimeter-wave FET model," in IEEE MTT-S Int. Microwave Symp. Dig., 2000, pp. 1381-1384.
6. M. Fernandez-Barciela, P. J. Tasker, Y. Campos-Roca, M. Demmler, H. Massler, E. Sanchez, M. C. Curras-Francos, and M. Schlechtweg, "A simplified broad-band large-signal nonquasi-static table-based FET model," IEEE Trans. Microwave Theory Tech., vol. 48, pp. 395-405, Mar. 2000.
7. P. Jansen, D. Schreurs, W. De Raedt, B. Nauwelaers, and M, Van Rossum, "Consistent small-signal and large-signal extractions techniques for heterojunction FET," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 87-93, Jan. 1995.
8. R. Reuter, M. Agethen, U. Auer, S. van Waasen, D. Peters, W. Brockerhoff, and F. J. Tegude, "Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET," in IEEE MTT-S Int. Microwave Symp. Dig., 1997, pp. 1317-1320.
9. D. Root, "Analysis and exact solutions of relaxation-time differential equations describing non quasistatic large signal FET models," in Proc. 24th Eur. Microwave Conf., 1994, pp. 854-859.
10. D. S. McPherson, K. Elgaid, I. G. Thayne, I. D. Robertson, and S. Lucyszyn, "Ultra-broadband nonlinear pHEMT modeling using TOPAS," in 8th IEEE Int. High-Performance Electron Devices for Microwave and Optoelectronic Applications Symp., 2000, pp. 85-88.
11. C. J. Wei, Y. A. Tkachenko, J. Gering, and D. Bartle, "Completely consistent "no-charge" pHEMT model including DC/RF dispersion," in IEEE MTT-S Int. Microwave Symp. Dig., 2002, pp. 2133-2136.
12. D. Root, "Elements of measurements-based large-signal device modeling," in Proc. RAWCON Modeling and Simulation of Devices and Circuits for Wireless Communication Systems Workshop, 1998, p. 34.
13. D. Schreurs, Y. Baeyens, B. K. J. C. Nauwelaers, W. De Raedt, M. Van Hove, and M. Van Rossum, "S-parameter measurements based quasistatic large-signal cold HEMT model for resistive mixer design," Int. J. Microwave Millimeter-Wave Computer-Aided Eng., vol. 6, no. 4, pp. 250-258, 1996.
14. D. Schreurs, A. Spiers, W. De Raedt, K. Van Der Zanden, Y. Baeyens, M. Van Hove, B. Nauwelaers, and M. Van Rossum, "DC, LF dispersion and HF characterization of short-time stressed InP based LM-HEMTs," in Proc. 7th Eur. Reliability of Electron Devices, Failure Physics and Analysis Symp., 1996, pp. 1911-1914.